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General view

GT100

IPRS Băneasa

Also known as: GT100A/4, GT100A/6, GT100A/8, GT100A/9, GT100A/10, GT100B/4, GT100B/6, GT100B/8, GT100B/9, GT100B/10
Manufacturer: IPRS Băneasa
Country: Romania
Year: Unknown
Category: Components
Type: Transistors
Documentation score: 1/5
Last edited: 25 OCT 2026

Specifications

Material: Si
Polarity: NPN
Max. power dissipation (Pc, Ptot, Pd): 250–300 W (see Variants)
Max. collector–emitter voltage |Vce|: 300–500 V (see Variants)
Max. collector–emitter voltage, base reverse-biased |Vcex|: 400–1000 V (see Variants)
Max. collector current |Ic|: 40–60 A (see Variants)
Max. base current |Ib|: 10 A
Max. peak collector current (Icm): 80–100 A (see Variants)
Max. junction temperature (Tj): 125 °C
DC current gain (hFE), min: 20
Collector–emitter saturation voltage (Vce sat): 2.5 V
Storage time (ts): 20000 ns
Fall time (tf): 4000 ns
Package: T-20
Application: high voltage switching giant Darlingtons

Sources: [1]

Variants (10)

						Note
GT100A/4	300	300	400	60	100	1990 catalogue; VCEsat at IC = 60 A; hFE at IC = 60 A, VCE = 5 V
GT100A/6	300	400	600	60	100	1990 catalogue; VCEsat at IC = 60 A; hFE at IC = 60 A, VCE = 5 V
GT100A/8	300	400	800	60	100	1990 catalogue; VCEsat at IC = 60 A; hFE at IC = 60 A, VCE = 5 V
GT100A/9	300	450	900	60	100	1990 catalogue; VCEsat at IC = 60 A; hFE at IC = 60 A, VCE = 5 V
GT100A/10	300	500	1000	60	100	1990 catalogue; VCEsat at IC = 60 A; hFE at IC = 60 A, VCE = 5 V
GT100B/4	250	300	400	40	80	1990 catalogue; VCEsat at IC = 40 A; hFE at IC = 60 A, VCE = 5 V
GT100B/6	250	400	600	40	80	1990 catalogue; VCEsat at IC = 40 A; hFE at IC = 60 A, VCE = 5 V
GT100B/8	250	400	800	40	80	1990 catalogue; VCEsat at IC = 40 A; hFE at IC = 60 A, VCE = 5 V
GT100B/9	250	450	900	40	80	1990 catalogue; VCEsat at IC = 40 A; hFE at IC = 60 A, VCE = 5 V
GT100B/10	250	500	1000	40	80	1990 catalogue; VCEsat at IC = 40 A; hFE at IC = 60 A, VCE = 5 V

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Description

The GT100 is a silicon NPN high voltage switching giant Darlington transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the GT100A/4, GT100A/6, GT100A/8 to GT100A/10, GT100B/4, GT100B/6 and GT100B/8 to GT100B/10 among the „High voltage switching giant Darlingtons” of its „Super power” section [1]. Their values are under Variants [1].

Gallery

IPRS Băneasa GT100: T-20 case outline and terminals, silicon transistors (dimensions in mm) — T-20 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

[1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „Super power”, „High voltage switching giant Darlingtons”, pp. 3-36…3-37