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GT150
IPRS Băneasa
- Also known as
- GT150A/3, GT150A/4, GT150A/5, GT150A/6, GT150A/7, GT150A/8, GT150A/9, GT150A/10, GT150B/3, GT150B/4, GT150B/5, GT150B/6, GT150B/7, GT150B/8, GT150B/9, GT150B/10
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot, Pd)
- 350–500 W (see Variants)
- Max. collector–emitter voltage |Vce|
- 300–1000 V (see Variants)
- Max. collector–emitter voltage, base reverse-biased |Vcex|
- 300–1000 V (see Variants)
- Max. collector current |Ic|
- 100–150 A (see Variants)
- Max. base current |Ib|
- 8 A (see Variants)
- Max. peak collector current (Icm)
- 125–240 A (see Variants)
- Max. junction temperature (Tj)
- 125 °C
- DC current gain (hFE), min
- 50
- Collector–emitter saturation voltage (Vce sat)
- 2.5 V
- Storage time (ts)
- 20000 ns
- Fall time (tf)
- 4000 ns
- Package
- T-28
- Application
- high voltage switching giant Darlingtons
Sources: [1]
Variants (16)
| Note | Compare | |||||||
|---|---|---|---|---|---|---|---|---|
| GT150A/3 | 500 | 300 | 300 | 150 | 8 | 240 | 1990 catalogue; VCEsat at IC = 100 A; hFE at IC = 100 A, VCE = 5 V | |
| GT150A/4 | 500 | 400 | 400 | 150 | — | 240 | 1990 catalogue; VCEsat at IC = 100 A; hFE at IC = 100 A, VCE = 5 V | |
| GT150A/5 | 500 | 500 | 500 | 150 | 8 | 240 | 1990 catalogue; VCEsat at IC = 100 A; hFE at IC = 100 A, VCE = 5 V | |
| GT150A/6 | 500 | 600 | 600 | 150 | — | 240 | 1990 catalogue; VCEsat at IC = 100 A; hFE at IC = 100 A, VCE = 5 V | |
| GT150A/7 | 500 | 700 | 700 | 150 | 8 | 240 | 1990 catalogue; VCEsat at IC = 100 A; hFE at IC = 100 A, VCE = 5 V | |
| GT150A/8 | 500 | 800 | 800 | 150 | — | 240 | 1990 catalogue; VCEsat at IC = 100 A; hFE at IC = 100 A, VCE = 5 V | |
| GT150A/9 | 500 | 900 | 900 | 150 | 8 | 240 | 1990 catalogue; VCEsat at IC = 100 A; hFE at IC = 100 A, VCE = 5 V | |
| GT150A/10 | 500 | 1000 | 1000 | 150 | — | 240 | 1990 catalogue; VCEsat at IC = 100 A; hFE at IC = 100 A, VCE = 5 V | |
| GT150B/3 | 350 | 300 | 300 | 100 | 8 | 125 | 1990 catalogue; VCEsat at IC = 70 A; hFE at IC = 70 A, VCE = 5 V | |
| GT150B/4 | 350 | 400 | 400 | 100 | 8 | 125 | 1990 catalogue; VCEsat at IC = 70 A; hFE at IC = 70 A, VCE = 5 V | |
| GT150B/5 | 350 | 500 | 500 | 100 | 8 | 125 | 1990 catalogue; VCEsat at IC = 70 A; hFE at IC = 70 A, VCE = 5 V | |
| GT150B/6 | 350 | 600 | 600 | 100 | 8 | 125 | 1990 catalogue; VCEsat at IC = 70 A; hFE at IC = 70 A, VCE = 5 V | |
| GT150B/7 | 350 | 700 | 700 | 100 | 8 | 125 | 1990 catalogue; VCEsat at IC = 70 A; hFE at IC = 70 A, VCE = 5 V | |
| GT150B/8 | 350 | 800 | 800 | 100 | 8 | 125 | 1990 catalogue; VCEsat at IC = 70 A; hFE at IC = 70 A, VCE = 5 V | |
| GT150B/9 | 350 | 900 | 900 | 100 | 8 | 125 | 1990 catalogue; VCEsat at IC = 70 A; hFE at IC = 70 A, VCE = 5 V | |
| GT150B/10 | 350 | 1000 | 1000 | 100 | 8 | 125 | 1990 catalogue; VCEsat at IC = 70 A; hFE at IC = 70 A, VCE = 5 V |
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Description
The GT150 is a silicon NPN high voltage switching giant Darlington transistor made by IPRS Băneasa [1].
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the GT150A/3 to GT150A/10 and GT150B/3 to GT150B/10 among the „High voltage switching giant Darlingtons” of its „Super power” section [1]. Their values are under Variants [1].
Gallery
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No documents available yet.
References
- [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „Super power”, „High voltage switching giant Darlingtons”, pp. 3-36…3-37