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TD162

IPRS Băneasa

Also known as
TD162/1, TD162A, TD162B, TD162C
Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
90 W
Max. collector–base voltage |Vcb|
30–120 V (see Variants)
Max. collector–emitter voltage |Vce|
30–120 V (see Variants)
Max. collector current |Ic|
8 A
Max. junction temperature (Tj)
200 °C
DC current gain (hFE), min
1000
Small-signal current gain (hfe)
≥ 4 (f = 1 MHz)
Collector–emitter saturation voltage (Vce sat)
2–2.2 V (see Variants)
Turn-on time (ton)
700 ns
Turn-off time (toff)
2500 ns
Package
TO-3
Application
general purpose epibase Darlingtons

Sources: [1]

Variants (5)

Note
TD162/130302.21990 catalogue; VCEsat at IC = 3 A; hFE at IC = 3 A, VCE = 3 V
TD162606021990 catalogue; VCEsat at IC = 3 A; hFE at IC = 3 A, VCE = 3 V
TD162A808021990 catalogue; VCEsat at IC = 3 A; hFE at IC = 3 A, VCE = 3 V
TD162B10010021990 catalogue; VCEsat at IC = 3 A; hFE at IC = 3 A, VCE = 3 V
TD162C12012021990 catalogue; VCEsat at IC = 3 A; hFE at IC = 3 A, VCE = 3 V

Click a column heading to sort. „+” adds a variant to the comparison (TD162).

Description

The TD162 is a silicon PNP general purpose epibase Darlington transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the TD162/1, TD162, TD162A, TD162B and TD162C among the „General purpose epibase Darlingtons – metal case” of its „High power” section [1]. Their values are under Variants [1].

Gallery

IPRS Băneasa TD162: TO-3 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-3 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „General purpose epibase Darlingtons – metal case”, pp. 3-24…3-25