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TD367

IPRS Băneasa

Also known as
TD367A, TD367B, TD367C
Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
150 W
Max. collector–base voltage |Vcb|
60–120 V (see Variants)
Max. collector–emitter voltage |Vce|
60–120 V (see Variants)
Max. collector current |Ic|
16 A
Max. junction temperature (Tj)
200 °C
DC current gain (hFE), min
1000
Small-signal current gain (hfe)
≥ 4 (f = 1 MHz)
Collector–emitter saturation voltage (Vce sat)
2 V
Turn-on time (ton)
2000 ns
Turn-off time (toff)
6000 ns
Package
TO-3
Application
general purpose epibase Darlingtons

Sources: [1]

Variants (4)

Note
TD36760601990 catalogue; VCEsat at IC = 10 A; hFE at IC = 10 A, VCE = 3 V
TD367A80801990 catalogue; VCEsat at IC = 10 A; hFE at IC = 10 A, VCE = 3 V
TD367B1001001990 catalogue; VCEsat at IC = 10 A; hFE at IC = 10 A, VCE = 3 V
TD367C1201201990 catalogue; VCEsat at IC = 10 A; hFE at IC = 10 A, VCE = 3 V

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Description

The TD367 is a silicon NPN general purpose epibase Darlington transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the TD367, TD367A, TD367B and TD367C among the „General purpose epibase Darlingtons – metal case” of its „High power” section [1]. Their values are under Variants [1].

Gallery

IPRS Băneasa TD367: TO-3 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-3 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „General purpose epibase Darlingtons – metal case”, pp. 3-24…3-25