General view

TD647

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
62.5 W
Max. collector–base voltage |Vcb|
80 V
Max. collector–emitter voltage |Vce|
80 V
Max. collector current |Ic|
8 A
Max. junction temperature (Tj)
175 °C
DC current gain (hFE), min
750
Small-signal current gain (hfe)
≥ 10 (f = 1 MHz)
Collector–emitter saturation voltage (Vce sat)
2 V
Package
F-22
Application
general purpose Darlingtons

Sources: [1]

Description

The TD647 is a silicon NPN general purpose Darlington transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the TD647 among the „General purpose Darlingtons – metal case” of its „High power” section [1], with Ptot 62.5 W (TC = 25 °C), TJM 175 °C, VCBO 80 V, VCEO 80 V, IC 8 A, VCEsat ≤ 2 V (IC = 3 A), hFE 750 (IC = 3 A, VCE = 3 V), hfe ≥ 10 at f = 1 MHz, F-22 case [1].

The catalog notes that the case F-22 is similar to TO-66 [1].

Gallery

IPRS Băneasa TD647: F-22 case outline and terminals, silicon transistors (dimensions in mm)No image available
F-22 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „General purpose Darlingtons – metal case”, pp. 3-12…3-13