General view

1N4154

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
switching diode
Reverse voltage (VR)
25 V
Forward current (IF)
0.2 A
Surge forward current (IFSM, 10 ms)
2 A
Forward voltage (VF)
1 V
Reverse current (IR)
100 nA (VR = 25 V)
Reverse recovery time (trr)
2 ns
Total capacitance (Ct)
4 pF
Max. junction temperature (Tj)
200 °C
Package
DO-35 (F-80), glass

Sources: [1][4]

Description

The 1N4154 is a silicon switching diode made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (1st edition, 1983) with a reverse voltage VR of 25 V, in a DO-35 (F-80) glass package [1]. The package drawing is in the Gallery.

It appears only in the 1st edition of the Agenda, printed „1N 4154”, in the table „Diode cu siliciu, de comutație”: maximum reverse voltage VR 25 V, maximum forward current IF 200 mA, maximum junction temperature Tj 200 °C, forward voltage VF 1 V at IF = 30 mA, reverse current IR 100 nA at VR = 25 V, capacitance Ctot 4 pF and reverse recovery time trr 2 ns; the package drawing marks the cathode with a coloured band [1]. The 2nd edition (1989) no longer lists it: its table of fast silicon switching diodes has the 1N 4454 and prints the 1N 4151 twice [2].

Coded as (JEDEC system) [3]:

Part Meaning
1 device with 2 electrodes (diode)
N semiconductor device
4154 identification number (01–9999)

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 1N4154 among the „High speed switching diodes” of its „Small signal” section [4], with VR ≥ 25 V, IF ≤ 200 mA, TVJ ≤ 200 °C, IFSM 2000 mA, VF ≤ 1 V (IF = 30 mA), Ctot ≤ 4 pF, trr ≤ 2 ns, DO-35 case [4].

The values given for the 1N4154 elsewhere on this page [1] differ: package DO-35 (F-80), glass.

Gallery

IPRS Băneasa 1N4154: DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)No image available
DO-35 (F-80) glass package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)
IPRS Băneasa 1N4154: DO-35 case outline, silicon diodes (dimensions in mm)No image available
DO-35 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.3 „Diode pentru semnale de mică putere”, „Diode cu siliciu, de comutație” and „Diode cu siliciu, de uz general”, p. 450
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu siliciu de comutație (rapide și ultrarapide)”, pp. 512–513
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480
  4. [4]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „High speed switching diodes”, p. 5-01