1N60
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 09 OCT 2026
Specifications
- Material
- Ge
- Type
- general-purpose diode
- Peak reverse voltage (VRM)
- 25 V
- Reverse voltage (VR)
- 15 V
- Forward current (IF)
- 0.15 A
- Surge forward current (IFSM, 10 ms)
- 0.5 A
- Forward voltage (VF)
- 0.5 V
- Reverse current (IR)
- 200 µA (VR = 10 V)
- Package
- DO-7 (F-2), glass
Sources: [1]
Description
The 1N60 is a germanium general-purpose diode listed in the Agenda radioelectronistului (2nd edition, 1989) among the diodes of IPRS Băneasa, which made it only at the customer’s request; it has a peak reverse voltage VRM of 25 V and comes in a DO-7 (F-2) glass package with 1…3 coloured rings [1]. The package drawing is in the Gallery.
The code is printed „1N 60”. The table gives a peak reverse voltage VRM of 25 V, a reverse voltage VR of 15 V, a forward current IF of 150 mA, a surge forward current IFSM of 500 mA, a maximum forward voltage VFM of 0.5 V at IF = 0.4 mA and a maximum reverse current IRM of 200 µA at VR = 10 V [1].
A note to the table says that these diodes are not made routinely at IPRS-Băneasa, only at the customer’s request („nu se fabrică în mod curent la IPRS-Băneasa, ci doar la cererea beneficiarului”) [1].
Coded as (JEDEC system) [2]:
| Part | Meaning |
|---|---|
| 1 | device with 2 electrodes (diode) |
| N | semiconductor device |
| 60 | identification number (01–9999) |
Gallery
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Used in (1)
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu germaniu, de uz general”, p. 512
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480