General view

6DRR1…6DRR4

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
09 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
100–400 V (see Variants)
Forward current (IF)
6.5 A
Rectified current (Io)
6 A
Repetitive peak forward current (IFRM)
20 A
Surge forward current (IFSM, 10 ms)
75 A
Forward voltage (VF)
1.4 V
Reverse current (IR)
0.015 mA
Reverse recovery time (trr)
350 ns
Package
DO-4 (F9-M)

Sources: [1]

Variants (4)

6DRR1100
6DRR2200
6DRR3300
6DRR4400

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Description

The 6DRR1…6DRR4 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (1st edition, 1983) with a repetitive peak reverse voltage VRRM of 100–400 V and a rectified current Io of 6 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The block appears only in the 1st edition of the Agenda (printed „6 DRR1” … „6 DRR4” (the last code is circled by hand in the scan)) [1]; the 2nd edition (1989) no longer lists these codes [2].

Measurement conditions (as printed in the table): IF at Tamb = (100) °C; Io at Tamb = (100) °C; VF at IF = 6 A; IR at Tamb = 25 °C; IFSM for 10 ms. Temperatures in brackets are printed in brackets in the table.

The 2nd edition (1989) lists instead the „6 DRR-1P … 5P”, in a TO-220 package, among the fast silicon switching diodes [3] (see 6DRR-P).

Gallery

IPRS Băneasa 6DRR1…6DRR4: DO-4 (F9-M) package, diode (stud = cathode, lead = anode for the codes without R; the reverse for the codes with R)No image available
DO-4 (F9-M) package, diode (stud = cathode, lead = anode for the codes without R; the reverse for the codes with R)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.1 „Diode redresoare”, „Diode cu siliciu”, pp. 428–429
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 490–499
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu siliciu de comutație (rapide și ultrarapide)”, pp. 512–513