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Specifications
- Type
- switching diode
- Repetitive peak reverse voltage (VRRM)
- 170 V
- Forward current (IF)
- 0.1 A
- Forward voltage (VF)
- 1.1 V
- Reverse current (IR)
- 5 µA (VR = 70 V)
- Reverse recovery time (trr)
- 6 ns
- Total capacitance (Ct)
- 1.5 pF
- Marking on the case
- A4
- Package
- SOT-23
Sources: [1]
Description
The BAV70 is a switching diode made in Romania by ICCE (CCSIT-CE), listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 170 V, in a SOT-23 package marked „A4” [1].
The code is printed „BAV 70”; the table („Alte diode de comutație (produse de CCSIT-CE)”) gives VRRM 170 V, a forward current IF of 100 mA, a forward voltage VF of 1.1 V (IF = 50 mA), a reverse current IR of 5 µA (VR = 70 V), a capacitance C of 1.5 pF, a maximum reverse recovery time trr of 6 ns and the marking „A4” [1].
Coded as (Pro Electron system) [2]:
| Part | Meaning |
|---|---|
| B | base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV) |
| A | low-power signal diode |
| V70 | serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99) |
Gallery
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Documents
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Alte diode de comutație (produse de CCSIT-CE)”, p. 513
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480