General view

T1N

IPRS Băneasa

Year
Unknown
Category
Components
Type
Thyristors, diacs & triacs
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Type
thyristor, normal (N)
Repetitive peak reverse voltage (VRRM)
50–800 V (see Variants)
Max. average on-state current (IT(AV)M)
1 A
Max. repetitive peak on-state current (ITRM)
9 A
Max. surge on-state current (ITSM)
15 A
Max. peak gate power (PGM)
0.5 W
Gate trigger voltage (VGT)
2 V
Gate trigger current (IGT)
10 mA
Turn-on time (ton)
1.5 µs
Turn-off time (tq)
20 µs
Critical rate of rise of off-state voltage (dV/dt)
50 V/µs
Critical rate of rise of on-state current (di/dt)
10 A/µs
Package
TO-126 / TO-39 (SOT-32)

Sources: [1]

Variants (6)

Compare
T1N-0550
T1N-1100
T1N-2200
T1N-4400
T1N-6600
T1N-8800

Click a column heading to sort. „+” adds a variant to the comparison (T1N).

Description

The T1N is a series of normal silicon thyristors of 1 A listed in the Agenda radioelectronistului (2nd edition, 1989) among the thyristors made in Romania by IPRS Băneasa, in six voltage classes from 50 V (T1N-05) to 800 V (T1N-8) in a TO-126 / TO-39 (SOT-32) package [1]. The values of each code are in the Variants table.

Coded as (IPRS Băneasa code for thyristors) [1]:

Part Meaning
T thyristor
1 on-state current IT = 1 A
N normal (long turn-off time tq)
05…8 repetitive peak reverse voltage VRRM in hundreds of volts (05 = 50 V … 8 = 800 V)

IT(AV)M at Tc = 100 °C; ITRM at Tc = 100 °C; ITSM for 10 ms; VRRM (= VDRM) at Tc = 125 °C; dV/dt at Tc = 125 °C [1].

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 556