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T1R
IPRS Băneasa
- Manufacturer
- IPRS Băneasa

- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Thyristors, diacs & triacs
- Documentation score
- 1/5
- Last edited
- 06 OCT 2026
Specifications
- Type
- thyristor, fast (R)
- Repetitive peak reverse voltage (VRRM)
- 50–800 V (see Variants)
- Max. average on-state current (IT(AV)M)
- 1 A
- Max. repetitive peak on-state current (ITRM)
- 9 A
- Max. surge on-state current (ITSM)
- 15 A
- Max. peak gate power (PGM)
- 0.5 W
- Gate trigger voltage (VGT)
- 2 V
- Gate trigger current (IGT)
- 10 mA
- Turn-on time (ton)
- 1.5 µs
- Turn-off time (tq)
- 10 µs
- Critical rate of rise of off-state voltage (dV/dt)
- 50 V/µs
- Critical rate of rise of on-state current (di/dt)
- 10 A/µs
- Package
- TO-126 / TO-39 (SOT-32)
Sources: [1]
Variants (6)
| Compare | ||
|---|---|---|
| T1R-05 | 50 | |
| T1R-1 | 100 | |
| T1R-2 | 200 | |
| T1R-4 | 400 | |
| T1R-6 | 600 | |
| T1R-8 | 800 |
Click a column heading to sort. „+” adds a variant to the comparison (T1R).
Description
The T1R is a series of fast silicon thyristors of 1 A listed in the Agenda radioelectronistului (2nd edition, 1989) among the thyristors made in Romania by IPRS Băneasa, in six voltage classes from 50 V (T1R-05) to 800 V (T1R-8) in a TO-126 / TO-39 (SOT-32) package [1]. The values of each code are in the Variants table.
Coded as (IPRS Băneasa code for thyristors) [2]:
| Part | Meaning |
|---|---|
| T | thyristor |
| 1 | on-state current IT = 1 A |
| R | fast (short turn-off time tq) |
| 05…8 | repetitive peak reverse voltage VRRM in hundreds of volts (05 = 50 V … 8 = 800 V) |
IT(AV)M at Tc = 100 °C; ITRM at Tc = 100 °C; ITSM for 10 ms; VRRM (= VDRM) at Tc = 125 °C; dV/dt at Tc = 125 °C [1].
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 557
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 556