General view

T201…T212

IPRS Băneasa

Year
Unknown
Category
Components
Type
Thyristors, diacs & triacs
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Type
thyristor
Repetitive peak reverse voltage (VRRM)
100–1200 V (see Variants)
Max. average on-state current (IT(AV)M)
200 A
Max. repetitive peak on-state current (ITRM)
450 A
Max. surge on-state current (ITSM)
4000 A
Gate trigger voltage (VGT)
3 V
Gate trigger current (IGT)
300 mA
Turn-on time (ton)
15 µs
Turn-off time (tq)
300 µs
Critical rate of rise of off-state voltage (dV/dt)
50…1000 V/µs
Critical rate of rise of on-state current (di/dt)
50 A/µs
Package
TO-93 (S-204)

Sources: [1]

Variants (12)

T201100
T202200
T203300
T204400
T205500
T206600
T207700
T208800
T209900
T2101000
T2111100
T2121200

Click a column heading to sort. „+” adds a variant to the comparison (T201…T212).

Description

The T201…T212 is a series of silicon thyristors of 200 A listed in the Agenda radioelectronistului (2nd edition, 1989) among the thyristors made in Romania by IPRS Băneasa, in twelve voltage classes, from 100 V (T201) to 1200 V (T212), in a TO-93 (S-204) package [1]. The values of each code are in the Variants table.

The table prints the codes of the 1000, 1100 and 1200 V classes as T210, T211 and T212, although by the coding scheme (T + current in tens of amperes + voltage in hundreds of volts) they would be T2010, T2011 and T2012 [1].

A footnote of the table says that for these thyristors the code is completed with a last letter giving the critical dV/dt: A = 20, B = 50, C = 100, D = 200, E = 300, F = 400, G = 500, H = 600, I = 700, J = 800 and K = 1000 V/µs [1].

Coded as (IPRS Băneasa code for thyristors) [2]:

Part Meaning
T thyristor
20 on-state current IT = 200 A (in tens of amperes)
1…12 repetitive peak reverse voltage VRRM in hundreds of volts (1 = 100 V … 12 = 1200 V)

ITSM for 10 ms; VRRM at Tc = 125 °C; dV/dt at Tc = 125 °C [1].

Gallery

IPRS Băneasa T201…T212: TO-93 (S-204) thyristor (P = gate, C = cathode, A = anode)No image available
TO-93 (S-204) thyristor (P = gate, C = cathode, A = anode)

Documents

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References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 559
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 556