General view

T51…T512

IPRS Băneasa

Year
Unknown
Category
Components
Type
Thyristors, diacs & triacs
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Type
thyristor
Repetitive peak reverse voltage (VRRM)
100–1200 V (see Variants)
Max. average on-state current (IT(AV)M)
50 A
Max. repetitive peak on-state current (ITRM)
160 A
Max. surge on-state current (ITSM)
800 A
Gate trigger voltage (VGT)
1.2 V
Gate trigger current (IGT)
100 mA
Turn-on time (ton)
2.5 µs
Turn-off time (tq)
100 µs
Critical rate of rise of off-state voltage (dV/dt)
20…1000 V/µs
Critical rate of rise of on-state current (di/dt)
50 A/µs
Package
TO-49

Sources: [1]

Variants (12)

Compare
T51100
T52200
T53300
T54400
T55500
T56600
T57700
T58800
T59900
T5101000
T5111100
T5121200

Click a column heading to sort. „+” adds a variant to the comparison (T51…T512).

Description

The T51…T512 is a series of silicon thyristors of 50 A listed in the Agenda radioelectronistului (2nd edition, 1989) among the thyristors made in Romania by IPRS Băneasa, in twelve voltage classes, from 100 V (T51) to 1200 V (T512), in a TO-49 package [1]. The values of each code are in the Variants table.

A footnote of the table says that for these thyristors the code is completed with a last letter giving the critical dV/dt: A = 20, B = 50, C = 100, D = 200, E = 300, F = 400, G = 500, H = 600, I = 700, J = 800 and K = 1000 V/µs [1].

Coded as (IPRS Băneasa code for thyristors) [2]:

Part Meaning
T thyristor
5 on-state current IT = 50 A (in tens of amperes)
1…12 repetitive peak reverse voltage VRRM in hundreds of volts (1 = 100 V … 12 = 1200 V)

IT(AV)M and ITRM at Tc = 85 °C; ITSM for 10 ms; VRRM at Tc = 125 °C; dV/dt at Tc = 125 °C [1].

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 559
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 556