General view

T6N

IPRS Băneasa

Year
Unknown
Category
Components
Type
Thyristors, diacs & triacs
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Type
thyristor, normal (N)
Repetitive peak reverse voltage (VRRM)
50–500 V (see Variants)
Max. average on-state current (IT(AV)M)
6 A
Max. repetitive peak on-state current (ITRM)
48 A
Max. surge on-state current (ITSM)
60 A
Max. peak gate power (PGM)
0.5 W
Gate trigger voltage (VGT)
2 V
Gate trigger current (IGT)
30 mA
Turn-on time (ton)
2 µs
Turn-off time (tq)
50 µs
Critical rate of rise of off-state voltage (dV/dt)
50 V/µs
Critical rate of rise of on-state current (di/dt)
20 A/µs
Package
TO-220AB

Sources: [1]

Variants (6)

Compare
T6N-05P50
T6N-1P100
T6N-2P200
T6N-3P300
T6N-4P400
T6N-5P500

Click a column heading to sort. „+” adds a variant to the comparison (T6N).

Description

The T6N is a series of normal silicon thyristors of 6 A listed in the Agenda radioelectronistului (2nd edition, 1989) among the thyristors made in Romania by IPRS Băneasa, in six voltage classes from 50 V (T6N-05P) to 500 V (T6N-5P) in a TO-220AB package [1]. The values of each code are in the Variants table.

The Agenda lists the T6N…P and T6F…P versions in one row; the values given separately for the N version are IGT = 30 mA and tq = 50 µs [1].

Coded as (IPRS Băneasa code for thyristors) [2]:

Part Meaning
T thyristor
6 on-state current IT = 6 A
N normal (long turn-off time tq)
05…5 repetitive peak reverse voltage VRRM in hundreds of volts (05 = 50 V … 5 = 500 V)
P letter not explained in the coding scheme of the Agenda (TO-220AB versions)

IT(AV)M at Tc = 70 °C; ITRM at Tc = 100 °C; ITSM for 10 ms, at Tc = 100 °C; VRRM (= VDRM) at Tc = 125 °C; dV/dt at Tc = 100 °C [1].

Documents

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References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 557
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 556