General view

2N1613

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
3 W
Max. collector–base voltage |Vcb|
75–100 V (see Variants)
Max. collector–emitter voltage |Vce|
50–60 V (see Variants)
Max. emitter–base voltage |Veb|
7 V
Max. collector current |Ic|
0.8 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
60 MHz
DC current gain (hFE), min
40
DC current gain (hFE), max
120
Collector–emitter saturation voltage (Vce sat)
0.5–1.5 V (see Variants)
Package
TO-39
Application
switching

Sources: [1]

Variants (2)

2N161375501.5
2N1613A100600.5

Click a column heading to sort. „+” adds a variant to the comparison (2N1613).

Description

The 2N1613 is a silicon NPN switching transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-39 package [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
1613 identification number (01–9999)

hFE (h21E) measured at IC = 150 mA, VCE = 10 V; Vce sat at IC = 150 mA [1].

Gallery

IPRS Băneasa 2N1613: TO-39 pinout (collector connected to the case)No image available
TO-39 pinout (collector connected to the case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.18 „Tranzistoare cu siliciu, NPN, de comutație”, p. 540
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480