General view

2N1711

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
1.7 W
Max. collector–emitter voltage |Vce|
75–100 V (see Variants)
Max. emitter–base voltage |Veb|
7 V
Max. collector current |Ic|
0.8 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
70 MHz
DC current gain (hFE), min
100
DC current gain (hFE), max
300
Collector–emitter saturation voltage (Vce sat)
1.5 V
Collector cut-off current (Icbo)
10 nA, 100 nA (see Variants)
Package
TO-39
Application
low frequency, medium power

Sources: [1][3]

Variants (2)

2N17117510 nA
2N1711A100100 nA

Click a column heading to sort. „+” adds a variant to the comparison (2N1711).

Description

The 2N1711 is a low-frequency, medium-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-39 package [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
1711 identification number (01–9999)

hFE (h21E) measured at IC = 150 mA; Vce sat at IC = 150 mA; Icbo at VCB = 60 V; characteristics at Tamb = 25 °C [1].

2N1711A

The upper limit of hFE (300) is taken from the 1st edition of the Agenda (1983) [3], where the 2N1711A is listed among the switching transistors; it is unclear in the scan of the 2nd edition.

Gallery

IPRS Băneasa 2N1711: TO-39 pinout (collector connected to the case)No image available
TO-39 pinout (collector connected to the case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.8 „Tranzistoare cu siliciu, NPN, de joasă frecvență, medie putere”, p. 527
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.3.2 „Tranzistoare bipolare produse în RSR”, p. 476