No image available
2N2907
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 06 OCT 2026
Specifications
- Material
- Si
- Polarity
- PNP
- Max. power dissipation (Pc, Ptot, Pd)
- 0.4 W
- Max. collector–base voltage |Vcb|
- 60 V
- Max. collector–emitter voltage |Vce|
- 40–60 V (see Variants)
- Max. emitter–base voltage |Veb|
- 5 V
- Max. collector current |Ic|
- 0.6 A
- Max. junction temperature (Tj)
- 200 °C
- Transition frequency (ft)
- 200 MHz
- DC current gain (hFE), min
- 100
- DC current gain (hFE), max
- 300
- Collector–emitter saturation voltage (Vce sat)
- 1.6 V
- Turn-on time (ton)
- 30 ns
- Turn-off time (toff)
- 100 ns
- Package
- TO-18
- Application
- switching
Sources: [1]
Variants (2)
| Compare | ||
|---|---|---|
| 2N2907 | 40 | |
| 2N2907A | 60 |
Click a column heading to sort. „+” adds a variant to the comparison (2N2907).
Description
The 2N2907 is a silicon PNP switching transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-18 package [1].
Coded as (JEDEC system) [2]:
| Part | Meaning |
|---|---|
| 2 | device with 3 electrodes (transistor, thyristor etc.) |
| N | semiconductor device |
| 2907 | identification number (01–9999) |
hFE (h21E) measured at IC = 150 mA, VCE = 10 V; Vce sat at IC = 500 mA [1].
Gallery
No image availableDocuments
No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.17 „Tranzistoare cu siliciu, PNP, de comutație”, p. 539
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480