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2N3055
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 06 OCT 2026
Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot, Pd)
- 117 W
- Max. collector–emitter voltage |Vce|
- 20–60 V (see Variants)
- Max. emitter–base voltage |Veb|
- 7 V
- Max. collector current |Ic|
- 15 A
- Max. junction temperature (Tj)
- 200 °C
- Transition frequency (ft)
- 0.8–1.5 MHz (see Variants)
- DC current gain (hFE), min
- 10–70 (see Variants)
- DC current gain (hFE), max
- 70 (see Variants)
- Collector–emitter saturation voltage (Vce sat)
- 1.1–1.5 V (see Variants)
- Thermal resistance, junction–case (Rth j-c)
- 1.5 °C/W
- Package
- TO-3
- Application
- low frequency, power
Variants (13)
| Compare | ||||||
|---|---|---|---|---|---|---|
| 2N3055 | 60 | 1.5 | 15 | 70 | 1.1 | |
| 2N3055/1 | 30 | 0.8 | 20 | 70 | 1.5 | |
| 2N3055/2 | 30 | 0.8 | 10 | 70 | 1.5 | |
| 2N3055/3 | 60 | 0.8 | 20 | 70 | 1.5 | |
| 2N3055/4 | 20 | 0.8 | 30 | 70 | 1.5 | |
| 2N3055/5 | 20 | 0.8 | 14 | — | 1.5 | |
| 2N3055/6 | 60 | 0.8 | 15 | 70 | 1.1 | |
| 2N3055/7 | 60 | 0.8 | 14 | 70 | 1.1 | |
| 2N3055/8 | 60 | 0.8 | 70 | — | 1.1 | |
| 2N3055/9 | 45 | 0.8 | 14 | 70 | 1.1 | |
| 2N3055/10 | 45 | 0.8 | 70 | — | 1.1 | |
| 2N3055H | 60 | 1.5 | 15 | 70 | 1.1 | |
| 2N3055W | 60 | 1.5 | 15 | 70 | 1.1 |
Click a column heading to sort. „+” adds a variant to the comparison (2N3055).
Description
The 2N3055 is a low-frequency silicon NPN power transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-3 package [1].
The Agenda lists the 2N3055, 2N3055H and 2N3055W in one row, „2N 3055(H,W)” [1].
Coded as (JEDEC system) [2]:
| Part | Meaning |
|---|---|
| 2 | device with 3 electrodes (transistor, thyristor etc.) |
| N | semiconductor device |
| 3055 | identification number (01–9999) |
hFE (h21E) measured at IC = 4 A; Vce sat at IC = 4 A [1].
2N3055/1, 2N3055/2, 2N3055/3, 2N3055/4, 2N3055/7, 2N3055/9
hFE (h21E) measured at IC = 3 A; Vce sat at IC = 4 A [1].
2N3055/4
The VCEO value (20 V) is taken from the 1st edition of the Agenda (1983) [3]; it is unclear in the scan of the 2nd edition (20 or 26).
2N3055/10
hFE (h21E) measured at IC = 4 A; Vce sat at IC = 3 A [1].
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.10 „Tranzistoare cu siliciu, NPN, de joasă frecvență, de putere”, p. 531
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480
- [3]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.3.2 „Tranzistoare bipolare produse în RSR”, p. 469