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2N4959
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Si
- Polarity
- PNP
- Max. power dissipation (Pc, Ptot, Pd)
- 0.2 W
- Max. collector–base voltage |Vcb|
- 20 V
- Max. collector–emitter voltage |Vce|
- 20 V
- Max. emitter–base voltage |Veb|
- 3 V
- Max. collector current |Ic|
- 0.03 A
- Max. junction temperature (Tj)
- 200 °C
- Transition frequency (ft)
- ≤ 2500 MHz
- Feedback capacitance (C12e, Cre)
- 0.4 pF
- DC current gain (hFE), min
- 20
- DC current gain (hFE), max
- 150
- Collector cut-off current (Icbo)
- 100 nA
- Package
- TO-72
- Application
- high frequency, low power
Sources: [1]
Description
The 2N4959 is a high-frequency, low-power silicon PNP transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-72 package [1].
The column of the table is headed „Gp [dB] (h21E)”, with h21E values in brackets; the range 20…150 is printed without brackets and is entered here as hFE [1].
Coded as (JEDEC system) [2]:
| Part | Meaning |
|---|---|
| 2 | device with 3 electrodes (transistor, thyristor etc.) |
| N | semiconductor device |
| 4959 | identification number (01–9999) |
hFE (h21E) measured at IC = 2 mA; Icbo at VCB = 10 V [1].
Gallery
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No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.13 „Tranzistoare cu siliciu, PNP, de înaltă frecvență, mică putere”, p. 535
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480