General view

2N5109

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
2.5 W
Max. collector–base voltage |Vcb|
40 V
Max. collector–emitter voltage |Vce|
20 V
Max. emitter–base voltage |Veb|
3 V
Max. collector current |Ic|
0.4 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
≤ 1200 MHz
Feedback capacitance (C12e, Cre)
3.5 pF
DC current gain (hFE), min
25
DC current gain (hFE), max
120
Collector cut-off current (Icbo)
20 µA
Package
TO-39
Application
high frequency, low power

Sources: [1]

Variants (3)

2N5109
2N5109A
2N5109B

The sources give the same data for all these codes; they do not say how the versions differ.

Click a column heading to sort. „+” adds a variant to the comparison (2N5109).

Description

The 2N5109 is a high-frequency, low-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-39 package [1].

The Agenda lists the 2N5109, 2N5109A and 2N5109B in one row, „2N 5109 (A și B)” [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
5109 identification number (01–9999)

hFE (h21E) measured at IC = 50 mA; Icbo at VCB = 15 V [1].

Gallery

IPRS Băneasa 2N5109: TO-39 pinout (collector connected to the case)No image available
TO-39 pinout (collector connected to the case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.12 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, mică putere”, p. 534
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480