General view

2N5578

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
300 W
Max. collector–emitter voltage |Vce|
70 V
Max. collector current |Ic|
60 A
Max. junction temperature (Tj)
200 °C
DC current gain (hFE), min
10
DC current gain (hFE), max
40
Collector–emitter saturation voltage (Vce sat)
1.5 V
Thermal resistance, junction–case (Rth j-c)
0.5 °C/W
Package
TO-3
Application
low frequency, power

Sources: [1]

Description

The 2N5578 is a low-frequency silicon NPN power transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-3 package [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
5578 identification number (01–9999)

hFE (h21E) measured at IC = 40 A; Vce sat at IC = 50 A [1].

Gallery

IPRS Băneasa 2N5578: TO-3 pinout (collector = case)No image available
TO-3 pinout (collector = case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.10 „Tranzistoare cu siliciu, NPN, de joasă frecvență, de putere”, p. 531
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480