General view

2N5871

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. emitter–base voltage |Veb|
5 V
Max. collector current |Ic|
7 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
4 MHz
DC current gain (hFE), min
20
DC current gain (hFE), max
100
Collector–emitter saturation voltage (Vce sat)
1 V
Thermal resistance, junction–case (Rth j-c)
1.52 °C/W
Package
TO-3
Application
low frequency, power

Sources: [1]

Variants (3)

2N5871
2N5871/1
2N5871/2

The sources give the same data for all these codes; they do not say how the versions differ.

Click a column heading to sort. „+” adds a variant to the comparison (2N5871).

Description

The 2N5871 is a low-frequency silicon PNP power transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-3 package [1].

On p. 533 the heading of this table reads „Tranzistoare cu siliciu, PNP, de înaltă frecvență, mică putere”, but the table of contents gives 28.2.11 as „Tranzistoare cu Si, PNP, de JF, de putere” [1]. The column headers give the currents in mA, while the values (2–7) are those used in A for the NPN power transistors of 28.2.10; they are entered here in A. The 2N5871, 2N5871/1 and 2N5871/2 are listed in one row, „2N 5871(/1,/2)”, with VCEO given as „−45…−60” V and Ptot as „115…90” W, without saying which value belongs to which version [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
5871 identification number (01–9999)

hFE (h21E) measured at IC = 2.5 A; Vce sat at IC = 4 A [1].

Gallery

IPRS Băneasa 2N5871: TO-3 pinout (collector = case)No image available
TO-3 pinout (collector = case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.11 „Tranzistoare cu Si, PNP, de JF, de putere”, p. 533
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480