IPRS Băneasa 2N929No image available
TO-18 package – pinout: E = emitter, B = base, C = collector

2N929

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
2/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot)
0.3 W
Max. collector–emitter voltage |Vce|
45 V
Max. emitter–base voltage |Veb|
5 V
Max. collector current |Ic|
0.2 A
Max. junction temperature (Tj)
175 °C
Transition frequency (ft)
30 MHz
Small-signal current gain (hfe)
40–120
Noise figure (NF)
4 dB
Collector–emitter saturation voltage (Vce sat)
1 V
Package
TO-18
Application
low frequency, low power

Sources: [1]

Description

The 2N929 is a low-frequency, low-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-18 package [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
929 identification number (01–9999)

Small-signal current gain h21e measured at IC = 0.01 mA, VCE = 5 V; Vce sat at IC = 10 mA; ft at IC = 10 mA; noise figure at f = 0.01–15 kHz [1].

Gallery

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Documents

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References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.6 „Tranzistoare cu siliciu, NPN, de joasă frecvență, mică putere”, p. 526
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480