IPRS Băneasa AD149No image available
TO-3 package – pinout: E = emitter, B = base, C = collector (case)

AD149

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
2/5
Last edited
05 OCT 2026

Specifications

Material
Ge
Polarity
PNP
Max. power dissipation (Pc, Ptot)
30 W
Max. collector–base voltage |Vcb|
50 V
Max. collector–emitter voltage |Vce|
30 V
Max. collector current |Ic|
3 A
Transition frequency (ft)
0.3 MHz
Collector–emitter saturation voltage (Vce sat)
0.4 V
Thermal resistance, junction–ambient (Rth j-a)
1.5 °C/W
Package
TO-3
Application
low frequency, power

Sources: [1]

Description

The AD149 is a low-frequency germanium PNP power transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-3 package [1].

In the same list of IPRS germanium transistors, Un secol de electronică în România (2020) has the AD140 in this place [3].

Coded as (Pro Electron system) [2]:

Part Meaning
A base material with an activation energy of 0.6–1 eV, e.g. germanium (0.67 eV)
D low-frequency power transistor
149 serial number: three digits (100–999), for components for general use

Vce sat measured at IC = 3 A [1].

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.4 „Tranzistoare cu germaniu, PNP, de joasă frecvență, de putere”, p. 524
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480
  3. [3]N. Millea, I. Constantinescu (coord.) – „Un secol de electronică în România”, Editura Academiei Române, 2020, section VIII.1.2.2, pp. 395–396