No image availableBC252
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 2/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Si
- Polarity
- PNP
- Max. power dissipation (Pc, Ptot)
- 0.3 W
- Max. collector–emitter voltage |Vce|
- 25 V
- Max. emitter–base voltage |Veb|
- 4 V
- Max. collector current |Ic|
- 0.1 A
- Max. junction temperature (Tj)
- 150 °C
- Transition frequency (ft)
- 250 MHz
- Small-signal current gain (hfe)
- 125–900
- Noise figure (NF)
- 10 dB
- Collector–emitter saturation voltage (Vce sat)
- 0.3 V
- Package
- TO-92
- Application
- low frequency, low power
Sources: [1]
Description
The BC252 is a low-frequency, low-power silicon PNP transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-92 package [1].
Coded as (Pro Electron system) [2]:
| Part | Meaning |
|---|---|
| B | base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV) |
| C | low-frequency, low-power transistor |
| 252 | serial number: three digits (100–999), for components for general use |
Small-signal current gain h21e measured at IC = 2 mA, VCE = 5 V; Vce sat at IC = 10 mA; ft at IC = 10 mA; noise figure at f = 1 MHz (unit as printed in this table) [1].
Gallery
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Documents
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.7 „Tranzistoare cu siliciu, PNP, de joasă frecvență, mică putere”, p. 526
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480