No image availableBC560
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 2/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Si
- Polarity
- PNP
- Max. power dissipation (Pc, Ptot)
- 0.3 W
- Max. collector–emitter voltage |Vce|
- 45 V
- Max. emitter–base voltage |Veb|
- 5 V
- Max. collector current |Ic|
- 0.1 A
- Max. junction temperature (Tj)
- 150 °C
- Transition frequency (ft)
- 150 MHz
- Small-signal current gain (hfe)
- 110–800
- Noise figure (NF)
- 10 dB
- Package
- TO-92
- Application
- low frequency, low power
Sources: [1]
Description
The BC560 is a low-frequency, low-power silicon PNP transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-92 package [1].
The Vce sat value of the BC560 is illegible in the scan of the 2nd edition of the Agenda, and the 1st edition does not list this transistor.
Coded as (Pro Electron system) [2]:
| Part | Meaning |
|---|---|
| B | base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV) |
| C | low-frequency, low-power transistor |
| 560 | serial number: three digits (100–999), for components for general use |
Small-signal current gain h21e measured at IC = 2 mA, VCE = 5 V; ft at IC = 10 mA; noise figure at f = 1 MHz (unit as printed in this table) [1].
Gallery
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Documents
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.7 „Tranzistoare cu siliciu, PNP, de joasă frecvență, mică putere”, p. 526
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480