General view

BDX67

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
150 W
Max. collector–emitter voltage |Vce|
60–120 V (see Variants)
Max. emitter–base voltage |Veb|
2.5 V
Max. collector current |Ic|
20 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
0.8 MHz
DC current gain (hFE)
1500, 1000, 850 (see Variants)
Collector–emitter saturation voltage (Vce sat)
2 V
Thermal resistance, junction–case (Rth j-c)
1.17 °C/W
Package
TO-3
Application
low frequency, power

Sources: [1]

Variants (4)

BDX67601500
BDX67A801000
BDX67B1001000
BDX67C120850

Click a column heading to sort. „+” adds a variant to the comparison (BDX67).

Description

The BDX67 is a low-frequency silicon NPN power transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-3 package [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
D low-frequency power transistor
X67 serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99)
A, B, C letter with no coded meaning, marking a constructional variant

hFE (h21E) measured at IC = 16 A; Vce sat at IC = 10 A [1].

Gallery

IPRS Băneasa BDX67: TO-3 pinout (collector = case)No image available
TO-3 pinout (collector = case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.10 „Tranzistoare cu siliciu, NPN, de joasă frecvență, de putere”, p. 530
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480