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BF115
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot, Pd)
- 0.165 W
- Max. collector–base voltage |Vcb|
- 50 V
- Max. collector–emitter voltage |Vce|
- 30 V
- Max. emitter–base voltage |Veb|
- 5 V
- Max. collector current |Ic|
- 0.03 A
- Max. junction temperature (Tj)
- 175 °C
- Transition frequency (ft)
- 150 MHz
- Feedback capacitance (C12e, Cre)
- 0.8 pF
- DC current gain (hFE), min
- 40
- DC current gain (hFE), max
- 165
- Collector cut-off current (Icbo)
- 100 nA
- Package
- TO-72
- Application
- high frequency, low power
Sources: [1]
Description
The BF115 is a high-frequency, low-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-72 package [1].
Coded as (Pro Electron system) [2]:
| Part | Meaning |
|---|---|
| B | base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV) |
| F | high-frequency, low-power transistor |
| 115 | serial number: three digits (100–999), for components for general use |
hFE (h21E) measured at IC = 1 mA; Icbo at VCB = 10 V [1].
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.12 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, mică putere”, p. 533
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480