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BF179
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 06 OCT 2026
Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot, Pd)
- 1.4 W
- Max. collector–emitter voltage, base resistor |Vcer|
- 160–250 V (see Variants)
- Max. emitter–base voltage |Veb|
- 5 V
- Max. collector current |Ic|
- 0.05 A
- Max. junction temperature (Tj)
- 175 °C
- Transition frequency (ft)
- 120 MHz
- Feedback capacitance (C12e, Cre)
- 1.8 pF
- DC current gain (hFE)
- 20
- Package
- TO-5 / TO-39
- Application
- high frequency, medium power
Sources: [1]
Variants (3)
| Compare | ||
|---|---|---|
| BF179A | 160 | |
| BF179B | 220 | |
| BF179C | 250 |
Click a column heading to sort. „+” adds a variant to the comparison (BF179).
Description
The BF179 is a series of high-frequency, medium-power silicon NPN transistors listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-5 / TO-39 package [1]. Its codes (BF179A, BF179B and BF179C) are in the Variants table.
Coded as (Pro Electron system) [2]:
| Part | Meaning |
|---|---|
| B | base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV) |
| F | high-frequency, low-power transistor |
| 179 | serial number: three digits (100–999), for components for general use |
| A, B, C | letter with no coded meaning, marking a constructional variant |
hFE (h21E) measured at IC = 15 mA [1].
Gallery
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No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.14 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, medie putere”, p. 536
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480