General view

BF215

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
0.165 W
Max. collector–base voltage |Vcb|
30 V
Max. collector–emitter voltage |Vce|
30 V
Max. emitter–base voltage |Veb|
4 V
Max. collector current |Ic|
0.03 A
Max. junction temperature (Tj)
175 °C
Transition frequency (ft)
250 MHz
Feedback capacitance (C12e, Cre)
0.7 pF
DC current gain (hFE), min
40
DC current gain (hFE), max
165
Collector cut-off current (Icbo)
100 nA
Package
TO-72
Application
high frequency, low power

Sources: [1]

Description

The BF215 is a high-frequency, low-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-72 package [1].

In the scan of the 2nd edition the pinout drawing for this group carries handwritten marks (pins rewritten); the 1st edition of the Agenda (1983) prints for the same transistor the TO-72 pinout shown in the gallery [3].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
F high-frequency, low-power transistor
215 serial number: three digits (100–999), for components for general use

hFE (h21E) measured at IC = 1 mA; Icbo at VCB = 10 V [1].

Gallery

IPRS Băneasa BF215: TO-72 pinout, variant with E at the top (S = fourth lead)No image available
TO-72 pinout, variant with E at the top (S = fourth lead)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.12 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, mică putere”, p. 534
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.3.2 „Tranzistoare bipolare produse în RSR”, p. 473