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BF247
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 06 OCT 2026
Specifications
- Material
- Si
- Polarity
- N-channel
- Structure / technology
- JFET
- Max. power dissipation (Pc, Ptot, Pd)
- 0.2 W
- Max. drain–source voltage |Vds|
- 25 V
- Max. gate–source voltage |Vgs|
- 25 V
- Gate–source cut-off / threshold voltage (Vgs off, Vgs th)
- −0.5…−14 V, −1.5…−4 V, −3…−7 V, −5.5…−12 V (see Variants)
- Zero-gate-voltage drain current (Idss)
- 10…300 mA, 30…80 mA, 60…140 mA, 110…250 mA (see Variants)
- Gate leakage current (Igss)
- −5 nA
- Forward transconductance (gm, gfs)
- ≥ 8 mA/V
- Package
- TO-92
Sources: [1]
Variants (4)
| Compare | |||
|---|---|---|---|
| BF247 | −0.5…−14 V | 10…300 mA | |
| BF247A | −1.5…−4 V | 30…80 mA | |
| BF247B | −3…−7 V | 60…140 mA | |
| BF247C | −5.5…−12 V | 110…250 mA |
Click a column heading to sort. „+” adds a variant to the comparison (BF247).
Description
The BF247 is a silicon N-channel junction field-effect transistor (JFET) listed in the Agenda radioelectronistului (2nd edition, 1989) among the field-effect transistors made in Romania by IPRS Băneasa, in a TO-92 package [1].
Coded as (Pro Electron system) [2]:
| Part | Meaning |
|---|---|
| B | base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV) |
| F | high-frequency, low-power transistor |
| 247 | serial number: three digits (100–999), for components for general use |
| A, B, C | letter with no coded meaning, marking a constructional variant |
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 29.2 „Tranzistoare cu efect de cîmp produse în R.S.R.”, p. 548
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480