General view

BF254

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
0.22 W
Max. collector–base voltage |Vcb|
30 V
Max. collector–emitter voltage |Vce|
20 V
Max. emitter–base voltage |Veb|
4 V
Max. collector current |Ic|
0.03 A
Max. junction temperature (Tj)
150 °C
Transition frequency (ft)
150 MHz
Feedback capacitance (C12e, Cre)
1.2 pF
DC current gain (hFE), min
67
DC current gain (hFE), max
330
Collector cut-off current (Icbo)
100 nA
Package
TO-92
Application
high frequency, low power

Sources: [1]

Description

The BF254 is a high-frequency, low-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-92 package [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
F high-frequency, low-power transistor
254 serial number: three digits (100–999), for components for general use

hFE (h21E) measured at IC = 1 mA; Icbo at VCB = 10 V [1].

Gallery

IPRS Băneasa BF254: TO-92 pinout (B, E, C)No image available
TO-92 pinout (B, E, C)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.12 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, mică putere”, p. 534
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480