General view

BF256

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
N-channel
Structure / technology
JFET
Max. power dissipation (Pc, Ptot, Pd)
0.2 W
Max. drain–source voltage |Vds|
30 V
Max. gate–source voltage |Vgs|
30 V
Gate–source cut-off / threshold voltage (Vgs off, Vgs th)
−0.5…−7 V
Zero-gate-voltage drain current (Idss)
3…18 mA, 3…7 mA, 6…13 mA, 11…18 mA (see Variants)
Gate leakage current (Igss)
−5 nA
Forward transconductance (gm, gfs)
≥ 4.5 mA/V
Package
TO-92

Sources: [1]

Variants (4)

BF2563…18 mA
BF256A3…7 mA
BF256B6…13 mA
BF256C11…18 mA

Click a column heading to sort. „+” adds a variant to the comparison (BF256).

Description

The BF256 is a silicon N-channel junction field-effect transistor (JFET) listed in the Agenda radioelectronistului (2nd edition, 1989) among the field-effect transistors made in Romania by IPRS Băneasa, in a TO-92 package [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
F high-frequency, low-power transistor
256 serial number: three digits (100–999), for components for general use
A, B, C letter with no coded meaning, marking a constructional variant

Gallery

IPRS Băneasa BF256: TO-92 pinout (FET: G = gate, S = source, D = drain)No image available
TO-92 pinout (FET: G = gate, S = source, D = drain)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 29.2 „Tranzistoare cu efect de cîmp produse în R.S.R.”, p. 548
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480