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BF257
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 06 OCT 2026
Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot, Pd)
- 5 W
- Max. collector–base voltage |Vcb|
- 160–200 V (see Variants)
- Max. collector–emitter voltage |Vce|
- 160–200 V (see Variants)
- Max. emitter–base voltage |Veb|
- 5 V
- Max. collector current |Ic|
- 0.1 A
- Max. junction temperature (Tj)
- 175 °C
- Transition frequency (ft)
- 90 MHz
- Feedback capacitance (C12e, Cre)
- 4.2 pF
- DC current gain (hFE), min
- 25
- Collector cut-off current (Icbo)
- 50 nA
- Package
- TO-5 / TO-39
- Application
- high frequency, medium power
Sources: [1]
Variants (2)
| Compare | |||
|---|---|---|---|
| BF257 | 160 | 160 | |
| BF257E | 200 | 200 |
Click a column heading to sort. „+” adds a variant to the comparison (BF257).
Description
The BF257 is a high-frequency, medium-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-5 / TO-39 package [1].
Coded as (Pro Electron system) [2]:
| Part | Meaning |
|---|---|
| B | base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV) |
| F | high-frequency, low-power transistor |
| 257 | serial number: three digits (100–999), for components for general use |
| E | letter with no coded meaning, marking a constructional variant |
hFE (h21E) measured at IC = 30 mA; Icbo at VCB = 100 V [1].
Gallery
No image availableDocuments
No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.14 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, medie putere”, p. 536
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480