General view

BF421A

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
0.83 W
Max. collector–base voltage |Vcb|
300 V
Max. collector–emitter voltage |Vce|
300 V
Max. emitter–base voltage |Veb|
5 V
Max. collector current |Ic|
0.025 A
Max. junction temperature (Tj)
150 °C
Transition frequency (ft)
60 MHz
Feedback capacitance (C12e, Cre)
1.6 pF
DC current gain (hFE), min
40
Collector cut-off current (Icbo)
10 nA
Package
TO-92
Application
high frequency, low power

Sources: [1]

Description

The BF421A is a high-frequency, low-power silicon PNP transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-92 package [1].

A footnote of the table says that in this code the letter A indicates a terminal configuration of the type EBC [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
F high-frequency, low-power transistor
421 serial number: three digits (100–999), for components for general use
A letter with no coded meaning, marking a constructional variant

hFE (h21E) measured at IC = 25 mA; Icbo at VCB = 200 V [1].

Gallery

IPRS Băneasa BF421A: TO-92 pinout as drawn in the table (C, B, E)No image available
TO-92 pinout as drawn in the table (C, B, E)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.13 „Tranzistoare cu siliciu, PNP, de înaltă frecvență, mică putere”, p. 535
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480