General view

BF457

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
1.2–10 W (see Variants)
Max. collector–base voltage |Vcb|
160–210 V (see Variants)
Max. collector–emitter voltage |Vce|
210–300 V (see Variants)
Max. emitter–base voltage |Veb|
5 V
Max. collector current |Ic|
0.1 A
Max. junction temperature (Tj)
150 °C
Transition frequency (ft)
50 MHz
Feedback capacitance (C12e, Cre)
5.5 pF
DC current gain (hFE), min
25
Collector cut-off current (Icbo)
50 nA
Package
TO-126
Application
high frequency, medium power

Sources: [1]

Variants (2)

BF45710160300
BF457E1.2210210

Click a column heading to sort. „+” adds a variant to the comparison (BF457).

Description

The BF457 is a high-frequency, medium-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-126 package [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
F high-frequency, low-power transistor
457 serial number: three digits (100–999), for components for general use
E letter with no coded meaning, marking a constructional variant

hFE (h21E) measured at IC = 30 mA; Icbo at VCB = 100 V [1].

BF457E

The code is printed as „BF 457 E” in the Agenda [1].

Gallery

IPRS Băneasa BF457: TO-126 pinoutNo image available
TO-126 pinout

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.14 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, medie putere”, p. 536
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480