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BSW19
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Si
- Polarity
- PNP
- Max. power dissipation (Pc, Ptot, Pd)
- 0.3 W
- Max. collector–base voltage |Vcb|
- 35 V
- Max. collector–emitter voltage |Vce|
- 30 V
- Max. emitter–base voltage |Veb|
- 5 V
- Max. collector current |Ic|
- 0.2 A
- Max. junction temperature (Tj)
- 175 °C
- Transition frequency (ft)
- 150 MHz
- DC current gain (hFE), min
- 40
- DC current gain (hFE), max
- 300
- Collector–emitter saturation voltage (Vce sat)
- 0.3 V
- Turn-on time (ton)
- 150 ns
- Turn-off time (toff)
- 800 ns
- Package
- TO-18
- Application
- switching
Sources: [1]
Description
The BSW19 is a silicon PNP switching transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-18 package [1].
Coded as (Pro Electron system) [2]:
| Part | Meaning |
|---|---|
| B | base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV) |
| S | low-power switching transistor |
| W19 | serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99) |
hFE (h21E) measured at IC = 10 mA, VCE = 1 V; Vce sat at IC = 50 mA [1].
Gallery
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No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.17 „Tranzistoare cu siliciu, PNP, de comutație”, p. 538
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480