General view

BSX12

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
3 W
Max. collector–base voltage |Vcb|
25 V
Max. collector–emitter voltage |Vce|
12–15 V (see Variants)
Max. emitter–base voltage |Veb|
4 V
Max. collector current |Ic|
1 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
450 MHz
DC current gain (hFE), min
30
DC current gain (hFE), max
120
Collector–emitter saturation voltage (Vce sat)
0.7 V
Turn-on time (ton)
15 ns
Turn-off time (toff)
25 ns
Package
TO-18
Application
switching

Sources: [1]

Variants (3)

BSX1212
BSX12A15
BSX12S12

Click a column heading to sort. „+” adds a variant to the comparison (BSX12).

Description

The BSX12 is a silicon NPN switching transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-18 package [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
S low-power switching transistor
X12 serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99)
A, S letter with no coded meaning, marking a constructional variant

hFE (h21E) measured at IC = 300 mA, VCE = 0.5 V; Vce sat at IC = 1000 mA [1].

Gallery

IPRS Băneasa BSX12: TO-18 pinoutNo image available
TO-18 pinout

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.18 „Tranzistoare cu siliciu, NPN, de comutație”, p. 539
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480