No image available
BSX21
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot, Pd)
- 0.3 W
- Max. collector–base voltage |Vcb|
- 120 V
- Max. collector–emitter voltage |Vce|
- 80 V
- Max. emitter–base voltage |Veb|
- 5 V
- Max. collector current |Ic|
- 0.05 A
- Max. junction temperature (Tj)
- 175 °C
- Transition frequency (ft)
- 60 MHz
- DC current gain (hFE), min
- 20
- Collector–emitter saturation voltage (Vce sat)
- 1.8 V
- Package
- TO-18
- Application
- switching
Sources: [1]
Description
The BSX21 is a silicon NPN switching transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-18 package [1].
The VCE value for the hFE measurement is poorly printed in the scan of the 2nd edition; the 1st edition of the Agenda (1983) prints it as 3 V [3].
Coded as (Pro Electron system) [2]:
| Part | Meaning |
|---|---|
| B | base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV) |
| S | low-power switching transistor |
| X21 | serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99) |
hFE (h21E) measured at IC = 4 mA, VCE = 3 V; Vce sat at IC = 10 mA [1].
Gallery
No image availableDocuments
No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.18 „Tranzistoare cu siliciu, NPN, de comutație”, p. 540
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480
- [3]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.3.2 „Tranzistoare bipolare produse în RSR”, p. 476