General view

BSX46

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
5 W
Max. collector–emitter voltage |Vce|
60 V
Max. emitter–base voltage |Veb|
7 V
Max. collector current |Ic|
1 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
50 MHz
DC current gain (hFE), min
40
DC current gain (hFE), max
250
Collector–emitter saturation voltage (Vce sat)
0.7 V
Package
TO-39
Application
low frequency, medium power

Sources: [1]

Description

The BSX46 is a low-frequency, medium-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-39 package [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
S low-power switching transistor
X46 serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99)

hFE (h21E) measured at IC = 100 mA; ft at IC = 50 mA; Vce sat at IC = 1000 mA; characteristics at Tamb = 25 °C [1].

Gallery

IPRS Băneasa BSX46: TO-39 pinout (collector connected to the case)No image available
TO-39 pinout (collector connected to the case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.8 „Tranzistoare cu siliciu, NPN, de joasă frecvență, medie putere”, p. 527
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480