General view

BU326A

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
62.5 W
Max. collector–emitter voltage |Vce|
400 V
Max. collector–emitter voltage, base shorted |Vces|
900 V
Max. emitter–base voltage |Veb|
7 V
Max. peak collector current (Icm)
8 A
Max. junction temperature (Tj)
175 °C
Transition frequency (ft)
4 MHz
DC current gain (hFE), min
3.5
Collector–emitter saturation voltage (Vce sat)
3 V
Thermal resistance, junction–case (Rth j-c)
1.75 °C/W
Package
TO-3
Application
high frequency, power

Sources: [1]

Description

The BU326A is a high-frequency silicon NPN power transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-3 package [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
U power switching transistor
326 serial number: three digits (100–999), for components for general use
A letter with no coded meaning, marking a constructional variant

hFE (h21E) measured at IC = 4000 mA, VCE = 5 V; ft at IC = 500 mA; Vce sat at IC = 4000 mA [1].

Gallery

IPRS Băneasa BU326A: TO-3 pinout (collector = case)No image available
TO-3 pinout (collector = case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.16 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, de putere”, p. 537
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480