General view

BUR606

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
60 W
Max. collector–emitter voltage |Vce|
200 V
Max. collector–emitter voltage, base shorted |Vces|
400–430 V (see Variants)
Max. emitter–base voltage |Veb|
6 V
Max. peak collector current (Icm)
7 A
Max. junction temperature (Tj)
175 °C
Transition frequency (ft)
10 MHz
Collector–emitter saturation voltage (Vce sat)
1 V
Thermal resistance, junction–case (Rth j-c)
2.5 °C/W
Package
TO-66
Application
high frequency, power

Sources: [1]

Variants (2)

BUR606430
BUR606D400

Click a column heading to sort. „+” adds a variant to the comparison (BUR606).

Description

The BUR606 is a high-frequency silicon NPN power transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-66 package [1].

ft at IC = 500 mA; Vce sat at IC = 5000 mA [1].

Gallery

IPRS Băneasa BUR606: TO-66 pinout (collector = case)No image available
TO-66 pinout (collector = case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.16 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, de putere”, p. 538