No image availableEFT250
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 2/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Ge
- Polarity
- PNP
- Max. power dissipation (Pc, Ptot)
- 30 W
- Max. collector–base voltage |Vcb|
- 70 V
- Max. collector–emitter voltage |Vce|
- 60 V
- Max. collector current |Ic|
- 3 A
- Transition frequency (ft)
- 0.2 MHz
- Collector–emitter saturation voltage (Vce sat)
- 0.4 V
- Thermal resistance, junction–ambient (Rth j-a)
- 2 °C/W
- Package
- TO-3
- Application
- low frequency, power
Sources: [1]
Description
The EFT250 is a low-frequency germanium PNP power transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-3 package [1].
In the same list of IPRS germanium transistors, Un secol de electronică în România (2020) has the EFT215 in this place [2].
Vce sat measured at IC = 3 A [1].
Gallery
No other images available yet.
Documents
No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.4 „Tranzistoare cu germaniu, PNP, de joasă frecvență, de putere”, p. 524
- [2]N. Millea, I. Constantinescu (coord.) – „Un secol de electronică în România”, Editura Academiei Române, 2020, section VIII.1.2.2, pp. 395–396