No image availableEFT373
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 2/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Ge
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot)
- 0.25 W
- Max. collector–base voltage |Vcb|
- 12 V
- Max. collector–emitter voltage |Vce|
- 20 V
- Max. emitter–base voltage |Veb|
- 9 V
- Max. collector current |Ic|
- 0.3 A
- Transition frequency (ft)
- 3.5 MHz
- DC current gain (hFE), min
- 55
- DC current gain (hFE), max
- 155
- Package
- TO-1A
- Application
- low frequency, low power
Sources: [1]
Description
The EFT373 is a low-frequency, low-power germanium NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-1A package [1].
In the same list of IPRS germanium transistors, Un secol de electronică în România (2020) has the EFT378 in this place [2].
hFE measured at IC = 100 mA [1].
Gallery
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Documents
No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.2 „Tranzistoare cu germaniu, NPN, de joasă frecvență, mică putere”, p. 523
- [2]N. Millea, I. Constantinescu (coord.) – „Un secol de electronică în România”, Editura Academiei Române, 2020, section VIII.1.2.2, pp. 395–396