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General view

KU612

IPRS Băneasa

Manufacturer: IPRS Băneasa
Country: Romania
Year: Unknown
Category: Components
Type: Transistors
Documentation score: 1/5
Last edited: 05 OCT 2026

Specifications

Material: Si
Polarity: NPN
Max. power dissipation (Pc, Ptot, Pd): 10 W
Max. collector–emitter voltage |Vce|: 110 V
Max. emitter–base voltage |Veb|: 3 V
Max. collector current |Ic|: 3 A
Max. junction temperature (Tj): 155 °C
Transition frequency (ft): 10 MHz
DC current gain (hFE), min: 20
DC current gain (hFE), max: 50
Collector–emitter saturation voltage (Vce sat): 1 V
Package: TO-66
Application: low frequency, power

Sources: [1]

Description

The KU612 is a low-frequency silicon NPN power transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-66 package [1].

hFE (h21E) measured at IC = 0.2 A; Vce sat at IC = 1 A [1].

Gallery

IPRS Băneasa KU612: TO-66 pinout (collector = case) — TO-66 pinout (collector = case)

Documents

No documents available yet.

References

[1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.10 „Tranzistoare cu siliciu, NPN, de joasă frecvență, de putere”, p. 532