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General view

SF129

IPRS Băneasa

Manufacturer: IPRS Băneasa
Country: Romania
Year: Unknown
Category: Components
Type: Transistors
Documentation score: 1/5
Last edited: 05 OCT 2026

Specifications

Material: Si
Polarity: NPN
Max. power dissipation (Pc, Ptot, Pd): 0.6 W
Max. collector–base voltage |Vcb|: 120 V
Max. collector–emitter voltage |Vce|: 80 V
Max. emitter–base voltage |Veb|: 7 V
Max. collector current |Ic|: 0.5 A
Max. junction temperature (Tj): 175 °C
Transition frequency (ft): 100 MHz
DC current gain (hFE), min: 18
DC current gain (hFE), max: 1120
Collector–emitter saturation voltage (Vce sat): 0.5 V
Turn-on time (ton): 550 ns
Turn-off time (toff): 1300 ns
Package: TO-39
Application: switching

Sources: [1]

Description

The SF129 is a silicon NPN switching transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-39 package [1].

hFE (h21E) measured at IC = 50 mA, VCE = 2 V; Vce sat at IC = 150 mA [1].

Gallery

IPRS Băneasa SF129: TO-39 pinout (collector connected to the case) — TO-39 pinout (collector connected to the case)

Documents

No documents available yet.

References

[1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.18 „Tranzistoare cu siliciu, NPN, de comutație”, p. 540