SN40
IPRS Băneasa
- Manufacturer
- IPRS Băneasa

- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot, Pd)
- 35 W
- Max. collector–base voltage |Vcb|
- 20 V
- Max. emitter–base voltage |Veb|
- 5 V
- Max. collector current |Ic|
- 3 A
- DC current gain (hFE), min
- 10
- Package
- TO-220
- Application
- teaching, low frequency
Sources: [1]
Description
The SN40 is a low-frequency silicon NPN transistor for teaching use listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-220 package [1].
According to the Agenda, the SN40 is obtained by sorting from the 2N5294…2N5298 and 2N5490…2N5496 families; its TO-220 package has the leads in the order E, B, C [1]. A footnote of the table says that these components come from production falling outside the branch technical norms (NTR) and are obtained by sorting, and that the values in the table are guaranteed minimum values; the current-gain column is headed „h21m” [1].
hFE (h21E) measured at IC = 1000 mA, VCE = 4 V; ICEO 1000 µA at VCE = 10 V [1].
Gallery
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Documents
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.19 „Tranzistoare cu siliciu pentru uz didactic”, p. 542