SPD2
IPRS Băneasa
- Manufacturer
- IPRS Băneasa

- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Si
- Polarity
- PNP
- Max. power dissipation (Pc, Ptot, Pd)
- 0.5 W
- Max. collector–base voltage |Vcb|
- 25 V
- Max. emitter–base voltage |Veb|
- 4.5 V
- Max. collector current |Ic|
- 0.5 A
- DC current gain (hFE), min
- 20
- Package
- TO-39
- Application
- teaching, low frequency
Sources: [1]
Description
The SPD2 is a low-frequency silicon PNP transistor for teaching use listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-39 package [1].
According to the Agenda, the SPD2 is obtained by sorting from the BSX45…BSX47 and 2N2218…2N2219 families; its TO-39 package has the leads in the order B, C, E [1]. The families named for this PNP transistor (BSX45…47 and 2N2218…2219) are listed elsewhere in the Agenda as NPN transistors, while the NPN SND2 is listed with the PNP families BSV15…17 and 2N2904…2905, so the families of the two rows appear to have been swapped in the table. A footnote of the table says that these components come from production falling outside the branch technical norms (NTR) and are obtained by sorting, and that the values in the table are guaranteed minimum values; the current-gain column is headed „h21m” [1].
hFE (h21E) measured at IC = 100 mA, VCE = 2 V; ICEO 100 µA at VCE = 15 V [1].
Gallery
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Documents
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.19 „Tranzistoare cu siliciu pentru uz didactic”, p. 542