General view

2N1671

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Structure / technology
UJT
Max. power dissipation (Pc, Ptot, Pd)
0.45 W
Max. emitter current (Ie)
0.05 A
Max. peak emitter current (Iem)
2 A
Max. emitter–base 1 voltage (Veb1)
30 V
Max. interbase voltage (Vb2b1)
35 V
Intrinsic stand-off ratio (η)
0.47…0.62
Interbase resistance (Rbb)
4.7…9.1 kΩ
Emitter reverse current (Ieb0), max
0.02–12 µA (see Variants)
Peak-point current (Ip), max
2–25 µA (see Variants)
Valley current (Iv), min
8 mA
Emitter saturation voltage (Veb1 sat)
5 V
Package
TO-5

Sources: [1]

Variants (4)

2N16711225
2N1671A1225
2N1671B0.26
2N1671C0.022

Click a column heading to sort. „+” adds a variant to the comparison (2N1671).

Description

The 2N1671 is a unijunction transistor (UJT) listed in the Agenda radioelectronistului (2nd edition, 1989) among the unijunction transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-5 package [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
1671 identification number (01–9999)

Max. peak emitter current = pulsed emitter current (IEMS, maximum surge emitter current), as a footnote of the table says [1].

Gallery

ICCE 2N1671: TO-5 pinout (UJT: E = emitter, B1 = base 1, B2 = base 2)No image available
TO-5 pinout (UJT: E = emitter, B1 = base 1, B2 = base 2)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 30.2 „Tranzistoare unijoncțiune produse în R.S.R.”, p. 551
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480