General view

2N2646

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Structure / technology
UJT
Max. power dissipation (Pc, Ptot, Pd)
0.3 W
Max. emitter current (Ie)
0.05 A
Max. peak emitter current (Iem)
2 A
Max. emitter–base 1 voltage (Veb1)
30 V
Max. interbase voltage (Vb2b1)
30 V
Intrinsic stand-off ratio (η)
0.56…0.75
Interbase resistance (Rbb)
4.7…9.1 kΩ
Emitter reverse current (Ieb0), max
12 µA
Peak-point current (Ip), max
5 µA
Valley current (Iv), min
4 mA
Emitter saturation voltage (Veb1 sat)
5 V
Package
TO-18

Sources: [1]

Description

The 2N2646 is a unijunction transistor (UJT) listed in the Agenda radioelectronistului (2nd edition, 1989) among the unijunction transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].

In the scan of the 2nd edition the TO-18 drawing for the 2N2646 and 2N2647 carries handwritten marks (B1 and B2 rewritten); the gallery shows the TO-18 drawing of the same table, which is also how the 1st edition of the Agenda (1983) draws these two transistors (E at the top, B1 on the left, B2 on the right) [3].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
2646 identification number (01–9999)

Max. peak emitter current = pulsed emitter current (IEMS, maximum surge emitter current), as a footnote of the table says [1].

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 30.2 „Tranzistoare unijoncțiune produse în R.S.R.”, p. 552
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.5.2 „TUJ-uri produse în RSR”, p. 488